technical data low power pnp silicon transistor qualified per mil - prf - 19500/177 devices qualified level 2n1131 2n1131l 2n1132 2n1132l jan jantx maximum ratings ratings symbol all units units collector - emitter voltage v ceo 40 vdc collect or - base voltage v cbo 50 vdc emitter - base voltage v ebo 5.0 vdc collector current i c 600 madc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 0.6 2.0 w w operating & storage temperature range t op , t j - 65 to +200 c 1) derate linearly 3.4 mw/ 0 c for t a 3 +25 0 c 2) derate linearly 11.4 mw/ 0 c for t c 3 +25 0 c to - 39* 2n1131, 2n1132 to - 5* 2n1311l, 2n1312l *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) char acteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 10 madc v (br)ceo 40 vdc collector - base breakdown voltage i c = 10 m adc v (br)cbo 50 vdc emitter - base cutoff current v eb = 5.0 vdc i ebo 100 m adc collector - emitter cutoff current v ce = 50 vdc, r be 10 ohms i cer 10 madc collector - base cutoff current v cb = 50 vdc v cb = 30 vdc i cbo 10 1.0 m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120 101 page 1 of 2
2n1131, 2n1132 jan, jantx electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward current transfer ratio i c = 150 madc, v ce = 10 vdc 2n1131, l 2n1132, l i c = 5.0 madc, v ce = 10 vdc 2n1131, l 2n1132, l h fe 20 30 15 25 45 90 colle ctor - emitter saturation voltage i c = 150 madc, i b = 15 madc v ce(sat) 1.3 vdc base - emitter saturation voltage i c = 150 madc, i b = 15 madc v be(sat) 1.5 vdc dynamic characteristics small - signal short circuit forward - current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 1 khz 2n1131, l 2n1132, l i c = 5.0 madc, v ce = 10 vdc, f = 1 khz 2n1131, l 2n1 132, l h fe 15 30 20 30 50 90 small - signal open - circuit output admittance i c = 1.0 madc, v ce = 5.0 vdc i c = 5.0 madc, v ce = 10 vdc h ob 1.0 5.0 m mho small - signal short - circuit input impedance i c = 1.0 madc, v ce = 5.0 vdc i c = 5.0 madc, v ce = 10 vdc h ib 25 35 10 w magnitude of common emitter small - signal short circuit forward - current transfer ratio i c = 50 madc, v ce = 10 vdc, f = 20 mhz 2n1131, l 2n1132, l ? h fe ? 2.5 3.0 20 20 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 45 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 80 pf switching characteristics turn - on time + turn - of f time (see figure 2 of mil - prf - 19500/177) t on + t off 50 h s 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
|
